Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon

Ahmed Kh. AL-Kadumi; Alwan M. Alwan; Ali H. Al-Batat

Ahmed Kh. AL-Kadumi⁽¹⁾ , Alwan M. Alwan⁽²⁾ , Ali H. Al-Batat⁽³⁾

(1) University of Zakho ,

(2) Al-Technology University ,

(3) Al-Mustansirya University

Issue
Vol. 1 No. 2 (2013): September, 2013

Submitted
October 3, 2018

Published
September 30, 2013

Keywords:

The

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Abstract

The present work is the study of the dark current density for porous silicon which is prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm²)and wavelength(650nm) under different anodization time(50,60)minute. ,The results obtained from this study shows different characteristics that of porous for the different porous Silicon layers. The empirical data of J-V characteristics are compared by using mathematical(a Poole-Frenkel-like, Schottky diode) models prepared the with assistance of Matlab program.

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Authors

Ahmed Kh. AL-Kadumi

juoz@uoz.edu.krd (Primary Contact)

Alwan M. Alwan

Ali H. Al-Batat

Author Biographies

Ahmed Kh. AL-Kadumi

Department of Physics, Faculty of Scince, University of Zakho, Kurdistan Region – Iraq.

Alwan M. Alwan

Department of Laser Physics, Al-Technology University, Iraq.

Ali H. Al-Batat

Department of Physics, College of Education, Al-Mustansirya University, Iraq.

AL-Kadumi, A. K., Alwan, A. M., & Al-Batat, A. H. (2013). Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon. Science Journal of University of Zakho, 1(2), 874-881. https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/448

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