Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon
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TheAbstract
The present work is the study of the dark current density for porous silicon which is prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm) under different anodization time(50,60)minute. ,The results obtained from this study shows different characteristics that of porous for the different porous Silicon layers. The empirical data of J-V characteristics are compared by using mathematical(a Poole-Frenkel-like, Schottky diode) models prepared the with assistance of Matlab program.
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Published
2013-09-30
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Science Journal of University of Zakho
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Copyright (c) 2013 Ahmed Kh. AL-Kadumi, Alwan M. Alwan, Ali H. Al-Batat
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Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon. (2013). Science Journal of University of Zakho, 1(2), 874-881. https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/448
