Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon
Keywords:
TheAbstract
The present work is the study of the dark current density for porous silicon which is prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm) under different anodization time(50,60)minute. ,The results obtained from this study shows different characteristics that of porous for the different porous Silicon layers. The empirical data of J-V characteristics are compared by using mathematical(a Poole-Frenkel-like, Schottky diode) models prepared the with assistance of Matlab program.
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Published
2013-09-30
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AL-Kadumi, A. K., Alwan, A. M., & Al-Batat, A. H. (2013). Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon. Science Journal of University of Zakho, 1(2), 874–881. Retrieved from https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/448
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