Theoretical Study of Influence of Some Material Parameters on Solar Cell Efficiency
Keywords:
Energy band, Doping process, Optimum parameter, Photovoltaic moduleAbstract
Silicon solar cells are prevailing types in the commercial market due to their stability, robustness and reliability. In this article, we explored the important controllable design parameters affecting the performance of the silicon p-n junction solar cells by using the computer program (Matlab scrip file). Through the simulation process we also determined the sensitivities of each parameter. Besides that, some hypothetical materials are also examined to explore the effect of band gap, doping process and thickness of n-layer. We have come out the optimum parameters to achieve the best performance of this type of cell. A simple one-diode model is used in order to predict how the performance Silicon solar cell changes its characteristics with doping process. It was found that the optimum doping concentration of the base from (1016- 1019) cm-3and optimal thickness of n-layer is about (10-100) µm for silicon solar cell.
References
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Kittidachachan P. ,Markvart T., Bagnall D.M., Greef R., Ensell G.J., (2007). A detailed study of p–n junction solar cells by means of collection efficiency, Solar Energy Materials & Solar Cells,91, 160–166.
Mellit A., Benghanem M., Kalogirou S.A.,(2007). Modeling and simulation of a stand-alone photovoltaic system using an adaptive artificial neural network: Proposition for a new sizing procedure. Renewable Energy, 32,285-313.
Reichel C.,Graneka_ F., Hermle M., and Glunz. S. W., (2011). Investigation of electrical shading effects in back-contacted back-junction silicon solar cells using the two-dimensional charge collection probability and the reciprocity theorem, J. Appl. Phys. 109, 1-12.
Schmidt J.,Aberle A.G.and Hezel R.,(1997). Investigation of carrier lifetime instabilities in cz-grown Silicon,inproc”, 26th IEEE photovoltaic specialists .conf., 13-18.
Su-won Y. and Young K., (2010). Boron diffusion into silicon crystal with SiNx layer as a reaction barrier, Solar Energy Materials & Solar Cells,94, 2187–2190.
Tyagil M. S.et al.,(1983). Minority carrier recombination in heavily-doped silicon. Solid-State Electronics,
26(6):577 – 597.
Arturo M.A.,(1991). Theoretical study of thin and thick emitter silicon solar cells, J. of Applied physics, 70,3345-3347.
Carig G. and Carbon N.(2008). (CNT) as Potentially a More Effective Material for Photovoltaic (PV) Converters.,Dissertation of Bachelor of engineering, Faculty of Engineering Unv. Of Southern Queensland.
Chengquan X ., Deren Y.,Xuegong Y., Peng W.,Peng C.,Duanlin Q., (2012). Effect of dopant compensation on the performance of Czochralski silicon solar cells, Solar Energy Materials & Solar Cells,101, 102–106.
Cotter J.E., Guo J.H., cousins P.J. and others,(2006). P-Type versus n-type Silicon wafers: prospects for high- Efficiency commercial Silicon solar cell.IEEE.Transactions on electron devices, 53,1893-1901.
Cuevas A., Giroult-Matlakowski G., Basore P.A.,(1994). Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters. 1th world conf. on photo. Energy conversion, IEEE photovoltaic specialists’ conference, l.2, 1446-1449.
Glunz S.W., Rein S.,Knobloch J.and Abe T., (1999). Comparison of boron gallium-doped P-type czochralski Silicon for photovoltaic application, progress photovoltaic.Res.Appl.7,463-469.
Julio C. D., Guillermo V. and Ruben W.,(1991), Optimization of junction depth and doping of solar cell emitters. Solar Cells, 31,497-503.
Kittidachachan P. ,Markvart T., Bagnall D.M., Greef R., Ensell G.J., (2007). A detailed study of p–n junction solar cells by means of collection efficiency, Solar Energy Materials & Solar Cells,91, 160–166.
Mellit A., Benghanem M., Kalogirou S.A.,(2007). Modeling and simulation of a stand-alone photovoltaic system using an adaptive artificial neural network: Proposition for a new sizing procedure. Renewable Energy, 32,285-313.
Reichel C.,Graneka_ F., Hermle M., and Glunz. S. W., (2011). Investigation of electrical shading effects in back-contacted back-junction silicon solar cells using the two-dimensional charge collection probability and the reciprocity theorem, J. Appl. Phys. 109, 1-12.
Schmidt J.,Aberle A.G.and Hezel R.,(1997). Investigation of carrier lifetime instabilities in cz-grown Silicon,inproc”, 26th IEEE photovoltaic specialists .conf., 13-18.
Su-won Y. and Young K., (2010). Boron diffusion into silicon crystal with SiNx layer as a reaction barrier, Solar Energy Materials & Solar Cells,94, 2187–2190.
Tyagil M. S.et al.,(1983). Minority carrier recombination in heavily-doped silicon. Solid-State Electronics,
26(6):577 – 597.
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Published
2013-09-30
How to Cite
Naser, N. M., Ismail, H. J., & Mawlud, S. Q. (2013). Theoretical Study of Influence of Some Material Parameters on Solar Cell Efficiency. Science Journal of University of Zakho, 1(2). Retrieved from https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/488
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