The Effects Of N-GaAs Substrate Orientations on The Electrical Performance of PANI/N-GaAs Hybrid Solar Cell Devices

Authors

  • Haveen A. Mustafa Dept. of Physics, Faculty of Science, University of Zakho, Kurdistan Region-Iraq
  • Dler A. Jameel Dept. of General Science, College of Basic Education, University of Zakho, Kurdistan Region-Iraq
  • Hussien I. Salim Dept. of Physics, Faculty of Science, University of Zakho, Kurdistan Region, Iraq
  • Sabah M. Ahmed Dept. of Physics, College of Science, University of Duhok, Kurdistan Region-Iraq

DOI:

https://doi.org/10.25271/sjuoz.2020.8.4.773

Keywords:

(100) GaAs, (110) GaAs, (311)B GaAs, PANI, IV curve, Hybrid device

Abstract

This paper reports the fabrication and electrical characterization of hybrid organic-inorganic solar cell based on the deposition of polyaniline (PANI) on n-type GaAs substrate with three different crystal orientations namely Au/PANI/(100) n-GaAs/(Ni-Au), Au/PANI/(110) n-GaAs/(Ni-Au), and Au/PANI/(311)B n-GaAs/(Ni-Au) using spin coating technique. The effect of crystallographic orientation of n-GaAs on solar cell efficiency of the hybrid solar cell devices has been studied utilizing current density-voltage (J-V) measurements under illumination conditions. Additionally, the influence of planes of n-GaAs on the diode parameters of the same devices has been investigated by employing current-voltage (I-V) characteristics in the dark conditions at room temperature. The experimental observations showed that the best performance was obtained for solar cells fabricated with the structure of Au/PANI/(311)B n-GaAs/(Ni-Au). The open-circuit voltage (Voc), short circuit current density (Jsc), and solar cell efficiency () of the same device were shown the values of 342 mV, 0.294 mAcm-2, 0.0196%, respectively under illuminated condition. All the solar cell characteristics were carried out under standard AM 1.5 at room temperature. Also, diode parameters of PANI/(311)B n-GaAs heterostructures were calculated from the dark I-V measurements revealed the lower reverse saturation current (Io) of 3.0×10-9A, higher barrier height () of 0.79 eV and lower ideality factor (n) of 3.16.

Author Biographies

Haveen A. Mustafa, Dept. of Physics, Faculty of Science, University of Zakho, Kurdistan Region-Iraq

Dept. of Physics, Faculty of Science, University of Zakho, Kurdistan Region-Iraq (havin1990@yahoo.com)

Dler A. Jameel, Dept. of General Science, College of Basic Education, University of Zakho, Kurdistan Region-Iraq

Dept. of General Science, College of Basic Education, University of Zakho, Kurdistan Region, Iraq –(dler.jameel@uoz.edu.krd

Hussien I. Salim, Dept. of Physics, Faculty of Science, University of Zakho, Kurdistan Region, Iraq

Dept. of Physics, Faculty of Science, University of Zakho, Kurdistan Region, Iraq - (hussein.salim@uoz.edu.krd)

Sabah M. Ahmed, Dept. of Physics, College of Science, University of Duhok, Kurdistan Region-Iraq

Dept. of Physics, College of Science, University of Duhok, Kurdistan Region, Iraq (sabma62@uod.ac)

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Published

2020-12-30

How to Cite

Mustafa, H. A., Jameel, D. A., Salim, H. I., & Ahmed, S. M. (2020). The Effects Of N-GaAs Substrate Orientations on The Electrical Performance of PANI/N-GaAs Hybrid Solar Cell Devices. Science Journal of University of Zakho, 8(4), 149–153. https://doi.org/10.25271/sjuoz.2020.8.4.773

Issue

Vol. 8 No. 4 (2020): December, 30

Section

Science Journal of University of Zakho

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